sputtering deposition

Through analysis we review methods fabricating thin film cathode, including chemical acetate base solution technique, sol-gel method, laser ablation, plasma enhanced chemical vapor deposition, pulsed laser deposition, radio frequency magnetron sputtering deposition, and electrostatic spray deposition.

评论了近年来制备薄膜阴极的方法，包括化学酸基溶解法、溶胶-凝胶法、激光焙烧法、增强型等离子体化学气相淀积法、脉冲激光法、电子束喷射沉积法和射频磁控溅射法。

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So, in this work , AlN thin films were prepared by RF magnetron sputtering deposition method.

所以本文利用射频磁控溅射方法制备AlN薄膜.

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The effect of laser energy density, pulsed frequency on the construction and properties of AlN thin films prepared by reactively pulsed laser sputtering deposition was discussed. And chemical stability of deposited AlN thin films has been studied in detail.

就反应式脉冲激光溅射淀积制备氮化铝（AlN）薄膜的过程，讨论了激光脉冲能量密度及脉冲频率对所制备薄膜结构性能的影响，并对薄膜的化学稳定性作了比较详细的研究。

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Polycrystalline Vanadium Oxides thin films deposited on Si ( 110) and quartz substrates for thermo-sensitive material of uncooled IR detector arrays were fabricated by ion beam sputtering deposition and oxide process.

采用离子束溅射镀膜和氧化工艺在Si（110）和石英衬底上制备了用于非致冷红外探测器阵列热敏材料的混合相氧化钒多晶薄膜。

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Development of an Apparatus on Magnetron Sputtering Deposition, JGP 600

JGP-600型磁控溅射薄膜沉积装置的研制

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Thin film deposition by ICP-enhanced nonequilibrium magnetron sputtering process For ICP AES analysis.

射频等离子体增强非平衡磁控溅射沉积技术分析过程冗长，不利于生产质控。

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RF magnetron sputtering has been applied to SiO 2 deposition for a long time, but for economic mass production of film coating on large size its use is limited due to the higher cost and lower efficiency.

磁控溅射法制备SiO2膜传统上采用射频溅射工艺，但它成本较高，效率较低，无法充分满足大面积镀膜工业生产的需要。

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Sigmund's thermal spike sputtering model has been modified by replacing the surface energy deposition density in Sigmund's model with average energy deposition density.

对Singmund热尖峰溅射模型进行了修正.用平均能量淀积密度近似代替了Singmund热尖峰溅射模型中的表面能量淀积密度近似。

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An argon ion source used for sputtering deposition has been successfully developed based on the construction of hollow cathode connecting hollow anode and the technologies of thermal cathode electron emission arc discharge, plasma magnetic confinement and ion extracting on a curving surface.

本文采用空心阴极空心阳极结构，用热阴极电子发射弧放电驱动并用磁场约束产生等离子体，用曲面发射引出离子束，研制成了氩气放电溅射离子源；

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In this paper, JGP 600 a new device of the magnetron sputtering deposition is introduced. The three magnetron sputtering target qualified to RF and DC is used;

本文介绍了一种新的JGP－600型磁控溅射沉积薄膜装置。

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C. Magnetron Sputtering in this paper. The TCR ( Temperature Coefficient of Resistance) of the films were less than 20 × 10-6/ ℃ using optimized deposition parameters, which were adjacent to the bulk material, realized the films of manganin pressure sensors.

根据薄膜理论和工艺实验，采用直流磁控溅射技术对薄膜沉积的工艺参数进行了优化，获得了电阻温度系数TCR≤20×10-6/℃的锰铜薄膜，与块材接近，实现了锰铜压力传感器的薄膜化。

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Chemical stability of AIN thin films prepared by reactively pulsed laser sputtering deposition

反应式脉冲激光溅射淀积AlN薄膜化学稳定性研究

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HfO_2 films were prepared by electron beam ( EB) evaporation, ion assisted deposition ( IAD) and dual ion beam sputtering ( DIBS);

HfO2薄膜利用电子束蒸发（EB）、离子束辅助（IAD）和双束离子束溅射（DIBS）三种方法沉积。

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The CN_x/ TiN multilayer composite coatings were deposited onto stainless steel substrates by combination of DC reaction magnetron sputtering deposition with multi-arc plating.

采用多弧-磁控溅射镀膜机在不锈钢2Cr13衬底上沉积CNx/TiN多层复合涂层。

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The planar magnetron sputtering target for α-si: h thin film deposition

淀积α-Si：H薄膜的磁控靶

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